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Gate to Source Cutoff Voltage VGS(off) (V) IGBT Attention of Handling Semiconductor Devices".
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(Not tested) Renesas recommends that operating conditions are designed according to a document "Power MOS FET Designed target value on Renesas measurement condition. Temperature (Typical)īody-Drain Diode Reverse Recovery Time (Typical) Static Drain to Source on State Resistance vs. Static Drain to Source on State Resistance RDS(on) () Drain Current (Typical)ĭrain to Source on State Resistance RDS(on) () Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 5 A, VGS = 10 V Notes6 Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings. Gate to source voltage Drain current Drain peak currentīody-drain diode reverse drain peak currentĬontinuous heavy condition (e.g. RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) Low leakage current High speed switching Quality grade: Standard File Info : application/pdf, 7 Pages, 165.74KB Document Document REN r07ds1431ej0100-rjk5035dppa0310 RJK5035DPP-A0ĥ00V - 10A - MOS FET High Speed Power Switching